Bipolar junction transistor
A bipolar junction transistor (BJT or bipolar transistor) is a type of transistor that relies on the contact of two types of semiconductor in order for it to work. BJTs can be used as amplifiers, switches, or in oscillators. BJTs can be found either on their own, or in large numbers as parts of integrated circuits.[1]
They are named bipolar transistors because their operation involves both electrons and holes.
The current gained is measured in hfe, Forward Current Gain. Typical amount can be between 200-350.
Bipolar Junction Transistor Media
Band diagram for NPN transistor at equilibrium
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Ebers–Moll model for an NPN transistor. IB, IC and IE are the base, collector and emitter currents; ICD and IED are the collector and emitter diode currents; αF and αR are the forward and reverse common-base current gains.
Other websites
- Simulation of a BJT in the Common Emitter Circuit Archived 2010-07-16 at the Wayback Machine