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Leo Esaki
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Leo Esaki | |
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![]() Leo Esaki in 1959 | |
Born | Osaka, Japan | March 12, 1925
Nationality | Japan |
Fields | Applied physics |
Alma mater | University of Tokyo |
Known for | electron tunneling, Esaki diode |
Notable awards | Stuart Ballantine Medal (1961) Nobel Prize in Physics (1973) IEEE Medal of Honor |
He is known for his invention of the Esaki diode, which exploited that phenomenon. This research was done when he was with Tokyo Tsushin Kogyo (now known as Sony). He has also contributed in being a pioneer of the semiconductor superlattice while he was with IBM.
Esaki was born on March 12, 1925 in Osaka, Japan.[2] He studied at the University of Tokyo.
References
- ↑ Esaki, L.; Tsu, R. (1970). "Superlattice and Negative Differential Conductivity in Semiconductors". IBM Journal of Research and Development 14: 61. .
- ↑ Esaki, Leo, "Long Journey into Tunneling," Nobel Lecture, Dec 12, 1973.
Other websites
- Leo Esaki – Biography. Retrieved Aug. 5, 2003 from http://www.nobel.se/physics/laureates/1973/esaki-bio.html
- IBM record
- IEEE History Center – Leo Esaki. Retrieved Jul. 19, 2011 from http://www.ieeeghn.org/wiki/index.php/Leo_Esaki
- Sony History – The Esaki Diode. Retrieved Aug. 5, 2003 from http://www.sony.net/Fun/SH/1-7/h5.html
- Freeview video 'An Interview with Leo Esaki' by the Vega Science Trust